METHOD OF FORMING GATE INSULATING LAYER OF NITRIDE/OXIDE LAYER STACK STRUCTURE

摘要

PURPOSE: A method of forming the gate insulating layer of nitride/oxide layer stack structure are provided to prevent the permeation of impurities and enhance an electrical characteristic by forming the nitride layer on the oxide layer. CONSTITUTION: The first reactive material is absorbed into a surface of a substrate(10). The first reactive material is partially removed by providing purge gas. The second reactive material including oxygen is reacted with the first reactive material. An oxide layer(16) is formed by removing partially the second reactive material. The third reactive material is absorbed into the surface of the oxide layer(16) of the substrate(10). The third reactive material is partially removed by providing the purge gas. The fourth reactive material including nitrogen is reacted with the third reactive material. A nitride layer(22) is formed by removing partially the fourth reactive material.