发明名称 |
A triple gate oxide process with high-gate dielectric |
摘要 |
<p>A method for forming, on a semiconductor substrate, a dielectric layer having a variable thickness and composition. The dielectric layer so formed can be used to form electronic devices such as MOSFETS and CMOSFETS that require gate dielectrics of different thicknesses. On a silicon substrate in accord with the preferred embodiment, the method requires the formation of three regions, two with SiO2 layers of different thicknesses and a third region of substrate with no oxide. A final thin layer of high-k dielectric is formed covering the three regions, so that the region with no oxide has the thinnest dielectric layer of only high-k material and the other two regions have the high-k dielectric over SiO2 layers of different thickness. A final layer of gate electrode material can be formed and patterned to form the required device structure. <IMAGE></p> |
申请公布号 |
EP1388892(A2) |
申请公布日期 |
2004.02.11 |
申请号 |
EP20030368076 |
申请日期 |
2003.08.04 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD. |
发明人 |
CHEW HOE ANG;WENHE LIN;JIA ZHEN ZHEN |
分类号 |
H01L21/283;H01L21/28;H01L21/8234;H01L21/8238;H01L27/088;H01L29/51;(IPC1-7):H01L21/823;H01L21/823 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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