| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a fabricating method thereof are provided to form rapidly the thickness of a top electrode of a capacitor by using a CVD method and a PVD method to form the top electrode of the capacitor. CONSTITUTION: A capacitor of a semiconductor device includes a bottom electrode(130) of a capacitor(136), a dielectric layer(132), the first top electrode(134a) of the capacitor(136), and the second top electrode(134b) of the capacitor(136). The bottom electrode(130) of the capacitor(136) is formed on an upper surface of a substrate. The dielectric layer(132) is formed on an upper surface of the bottom electrode(130) of the capacitor(136). The first top electrode(134a) of the capacitor(136) is formed on the dielectric layer by using a CVD method. The second top electrode(134b) of the capacitor(136) is formed by using a PVD method.
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