METHOD FOR FORMING WIRING STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a wiring structure of a semiconductor device is provided to reduce contact resistance between metal layers by improving the wiring structure of the semiconductor device. CONSTITUTION: The first interlayer dielectric(104b) is formed on a semiconductor substrate(100). A via hole is formed by etching partially the first interlayer dielectric(104b). The first metal layer(110b) is formed within the via hole. The first metal layer(110b) within the via hole is projected by etching selectively the first interlayer dielectric. The second interlayer dielectric(114a) is formed on the first interlayer dielectric and the first metal layer. A trench is formed by etching partially the second interlayer dielectric(114a). A barrier metal layer(118) is formed on the side and the bottom of the trench. The second metal layer(120) is formed within the trench.