发明名称 SEMICONDUCTOR MEMORY DEVICE AND DATA READ METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device and a data read method thereof are provided to read data accurately during a high frequency operation. CONSTITUTION: A data output buffer(14-1,14-2) inputs data in response to an on-time control signal, and buffers and latches the above inputted data in response to a latch clock signal. The first clock signal generator(22') generates the first clock signal. A latency signal generator(26) establishes and generates latency signals while setting a mode. The second clock signal generator(22') generates the second clock signal varying according to the latency signals by inputting the first clock signal. A latch clock signal generator(24) generates the latch clock signals in response to the first clock signal and the latency signals. And an on-time control signal generator(28) generates the on-time control signal in response to the second clock signal and the latency signals.
申请公布号 KR20040012242(A) 申请公布日期 2004.02.11
申请号 KR20020045693 申请日期 2002.08.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DU YEOL
分类号 G11C11/407;G11C7/00;G11C7/10;G11C7/22;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/407
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