发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND DATA READ METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor memory device and a data read method thereof are provided to read data accurately during a high frequency operation. CONSTITUTION: A data output buffer(14-1,14-2) inputs data in response to an on-time control signal, and buffers and latches the above inputted data in response to a latch clock signal. The first clock signal generator(22') generates the first clock signal. A latency signal generator(26) establishes and generates latency signals while setting a mode. The second clock signal generator(22') generates the second clock signal varying according to the latency signals by inputting the first clock signal. A latch clock signal generator(24) generates the latch clock signals in response to the first clock signal and the latency signals. And an on-time control signal generator(28) generates the on-time control signal in response to the second clock signal and the latency signals.
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申请公布号 |
KR20040012242(A) |
申请公布日期 |
2004.02.11 |
申请号 |
KR20020045693 |
申请日期 |
2002.08.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DU YEOL |
分类号 |
G11C11/407;G11C7/00;G11C7/10;G11C7/22;G11C11/409;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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