| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to be capable of preventing abnormal growth by carrying out a wet cleaning process before forming a spacer, and of restraining stress inconsistency phenomenon by reducing the thickness of the spacer. CONSTITUTION: A gate pattern(550) is formed at the upper portion of a semiconductor substrate. At this time, the gate pattern is made of a gate oxide layer(200), a polysilicon layer(300), a metal layer(400a), and a sacrificial nitride layer(500). A selective oxide layer is formed at the predetermined portions of the resultant structure by carrying out a selective oxidation process at the polysilicon layer. The metal layer is partially removed by carrying out a cleaning process. The first spacer(800a) is formed at both sidewalls of the gate pattern. Then, the second spacer(900a) is formed at the lateral portion of the first spacer.
|
