METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND PHOTO MASK USED FOR THE SAME

摘要

PURPOSE: A method for forming a pattern of a semiconductor device and a photo mask used for the same are provided to be capable of reducing proximity effect. CONSTITUTION: A semiconductor device is defined with the first and second region. At this time, a plurality of first patterns(12) are regularly spaced apart from each other as much as the first interval at the first region. At the time, a plurality of second patterns(14) are regularly spaced apart from each other as much as the second interval. Preferably, the second interval is larger than the first interval. A photo mask(30) is installed at the upper portion of the semiconductor device for forming the first and second patterns. The photo mask includes the first and second mask patterns(22,24) corresponding to the first and second patterns of the semiconductor device, respectively. The second mask pattern has a fine space(26) at the center portion for minimizing proximity effect.