发明名称 QUARTZ GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: To provide a quartz glass crucible from which silicon single crystal can be stably pulled up with high yield even in the long term operation without the occurrence of rough surface or cristobalite spots with little vibration of the surface of a silicon molten liquid. CONSTITUTION: In the quartz glass crucible for pulling up silicon single crystal, which is formed by providing an inner layer on the inside surface of a crucible base body having a bottom part and a straight drum part, an inner layer is composed of a synthetic quartz glass layer as far as a height of at least 0.25H to the height(H) from the bottom lowermost end to the upper end surface of the straight drum part of the crucible base body, a natural quartz glass layer or the natural and synthetic quartz mixed glass layer in the range of 0.5-0.8H and one of the synthetic quartz glass layer, the natural quartz glass layer or natural and synthetic quartz mixed glass layer in the residual inner layer.</p>
申请公布号 KR20040012472(A) 申请公布日期 2004.02.11
申请号 KR20030044272 申请日期 2003.07.01
申请人 SHIN-ETSU QUARTZ PRODUCTS CO., LTD. 发明人 OHAMA YASUO;TOGAWA TAKAYUKI
分类号 C03B20/00;C30B15/10;C30B29/06;(IPC1-7):C30B15/10 主分类号 C03B20/00
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