Structure for assembly of a Gunn diode

摘要

A structure for assembly of a Gunn diode in which the Gunn diode is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate, and comprises first and second electrodes arranged on the second semiconductor layer for applying voltage to the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode, wherein a surface ground electrode is formed on a surface of a microstrip substrate obtained by forming a signal electrode on a surface of a semi-insulating plate substrate and a ground electrode on a rear surface thereof, the surface ground electrode being connected to the ground electrode on the rear surface through a via hole; and wherein first and second electrodes of a Gunn diode are respectively connected and mounted to the signal electrode and the surface ground electrode. <IMAGE>