发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 PURPOSE: A TFT(Thin Film Transistor) substrate is provided to be capable of reducing the difference of RC delay between lines. CONSTITUTION: A TFT substrate is provided with an insulating substrate(110), gate lines(121) horizontally formed at the upper portion of the insulating substrate, and a data lines(171) vertically formed at the upper portion of the insulating substrate. The TFT substrate further includes gate pads(125) connected with the gate lines and data pads(179) connected with the data lines. The TFT substrate further includes maintenance electrode lines(131) horizontally formed between neighboring gate lines, and maintenance electrodes(133) and maintenance electrode connecting parts(91) for connecting the maintenance electrode lines with each other at the whole upper portion of the insulating substrate. At this time, the maintenance electrode lines are connected with a common bar(132). Preferably, a pad(134) is formed at one end portion of the common bar.
申请公布号 KR20040012153(A) 申请公布日期 2004.02.11
申请号 KR20020045563 申请日期 2002.08.01
申请人 发明人
分类号 G02F1/1343;G02F1/1362;G02F1/1368;G09F9/30;H01L21/3205;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L27/13;H01L29/786;H01L51/50;(IPC1-7):H01L29/786 主分类号 G02F1/1343
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