发明名称 EXHAUST GAS PRETREATING METHOD AND EXHAUST GAS PRETREATING DEVICE AND DEDUSTING DEVICE USED THEREFOR
摘要 A pretreating process for exhaust gas produced in a semiconductor or liquid crystal module production device such as a film forming device, wherein a maintenance work is restricted or safety of the work is improved. A pretreating method for a film−forming exhaust gas containing Si components, comprising the steps of burning and treating an exhaust gas, dedusting Si−containing dust from a combustion exhaust gas produced in the burning step, cleaning by water the dedusted combustion exhaust gas. This method that removes Si−containing dust in the dedusting process can restrict the precipitation of precipitates during the cleaning step, whereby ensuring a stable treating process, alleviating maintenance work, and conducting a cleaning process without requiring a large amount of cleaning water.
申请公布号 KR20040013096(A) 申请公布日期 2004.02.11
申请号 KR20047000046 申请日期 2002.07.03
申请人 发明人
分类号 F23G7/06;F23J15/04;B01D46/04;B01D53/34;B01D53/68;B01D53/77 主分类号 F23G7/06
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