发明名称 |
EXHAUST GAS PRETREATING METHOD AND EXHAUST GAS PRETREATING DEVICE AND DEDUSTING DEVICE USED THEREFOR |
摘要 |
A pretreating process for exhaust gas produced in a semiconductor or liquid crystal module production device such as a film forming device, wherein a maintenance work is restricted or safety of the work is improved. A pretreating method for a film−forming exhaust gas containing Si components, comprising the steps of burning and treating an exhaust gas, dedusting Si−containing dust from a combustion exhaust gas produced in the burning step, cleaning by water the dedusted combustion exhaust gas. This method that removes Si−containing dust in the dedusting process can restrict the precipitation of precipitates during the cleaning step, whereby ensuring a stable treating process, alleviating maintenance work, and conducting a cleaning process without requiring a large amount of cleaning water.
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申请公布号 |
KR20040013096(A) |
申请公布日期 |
2004.02.11 |
申请号 |
KR20047000046 |
申请日期 |
2002.07.03 |
申请人 |
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发明人 |
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分类号 |
F23G7/06;F23J15/04;B01D46/04;B01D53/34;B01D53/68;B01D53/77 |
主分类号 |
F23G7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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