发明名称 |
ARC CHAMBER OF ION IMPLANTATION EQUIPMENT |
摘要 |
PURPOSE: An arc chamber of ion implantation equipment is provided to expand the lifetime of an arc chamber by making the arc chamber formed of predetermined metal that has a strong covalent bond among atoms. CONSTITUTION: The arc chamber(100) is formed of predetermined metal having a stronger covalent bond of atoms than molybdenum. A source gas inflow opening(102) through which source gas is induced to the confronting surfaces is formed in the arc chamber. An ion discharge opening(104) for discharging the ionized source gas to a predetermined place is formed in the arc chamber. A cap(110) is inserted into one side surface of the arc chamber to seal the arc chamber. The first insulation part(120) is installed in the other side surface of the arc chamber to seal the arc chamber. The second insulation part(130) is installed in the arc chamber, separated from the arc chamber by a predetermined distance. A filament(140) discharges thermal electrons to ionize the source gas, installed in a side surface of the second insulation part confronting the cap.
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申请公布号 |
KR20040012055(A) |
申请公布日期 |
2004.02.11 |
申请号 |
KR20020045412 |
申请日期 |
2002.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA, GWANG HO |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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