Microbolometer and method for forming

摘要

A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and is suspended above a silicon substrate at a height of one-quarter wavelength of the infrared radiation to be detected. The amorphous silicon detector changes electrical resistance in response to the absorber element changing temperature. The microbolometer also includes electrode arms coupled to the silicon substrate to provide structural support for the amorphous silicon detector above the surface of the silicon substrate. The electrode arms further provide electrical connectivity for the microbolometer.