发明名称 |
Self-aligned multi-bit flash memory cell and its contactless flash memory array |
摘要 |
A self-aligned multi-bit flash memory cell of the present invention comprises two floating-gate structures with a spacing dielectric layer being formed therebetween; a planarized control-gate layer over an intergate-dielectric layer being formed over the two floating-gate structures and the spacing dielectric layer; and a common-source/drain conductive bit line together with a first sidewall dielectric spacer being formed over a flat bed formed by a common-source/drain diffusion region and nearby etched raised field-oxide layers. A contact less multi-bit flash memory array of the present invention comprises a plurality of common-source/drain conductive bit lines being formed transversely to a plurality of parallel STI regions and a plurality of word lines integrated with a plurality of planarized control-gate layers of the described cells being patterned and formed transversely to the plurality of common-source/drain conductive bit lines.
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申请公布号 |
US6690058(B2) |
申请公布日期 |
2004.02.10 |
申请号 |
US20020118889 |
申请日期 |
2002.04.10 |
申请人 |
WU CHING-YUAN |
发明人 |
WU CHING-YUAN |
分类号 |
G11C11/56;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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