| 发明名称 |
Dry etching method, microfabrication process and dry etching mask |
| 摘要 |
A dry etching is performed using a mask made of a titanium nitride under a reaction gas of a carbon monoxide with an additive of a nitrogen containing compound gas.
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| 申请公布号 |
US6689283(B2) |
申请公布日期 |
2004.02.10 |
| 申请号 |
US20010816374 |
申请日期 |
2001.03.26 |
| 申请人 |
TDK CORPORATION |
发明人 |
HATTORI KAZUHIRO;UCHIYAMA KENJI |
| 分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):C23F1/00;B32B9/00;B44C1/22 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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