| 摘要 |
Recently, there have been increasing demands for the reduction in size and weight of mobile computing/communication terminals as well as the elongation of the use time of the internal batteries. This invention alters the assembling structure of power MOSFET for reducing the on-state resistance and improving the production efficiency. This semiconductor device includes a lower frame having a header 2 for fixing a semiconductor chip and corresponding external leads 3d, 3g, a semiconductor chip fixed on the header, an upper frame 7 having a connection electrode 6 fixed on a current passage electrode 5 formed on the top face of the semiconductor chip 1 and the corresponding leads 3s, and a resin mold 8. This two-frame configuration provides extremely low on-state resistance and good production efficiency.
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