发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
An electro-optical device including an auxiliary capacitance using a pair of transparent conductive films is improved to provide a semiconductor device with high quality. A first transparent conductive film and a capacitance insulating film are formed into a laminate on a leveling film, and an opening portion is formed. An insulating film is formed thereon, and a second transparent conductive film is patterned to form a pixel electrode. At this time, the auxiliary capacitance made of a structure in which the capacitance insulating film is sandwiched between the first transparent conductive film and the pixel electrode is formed.
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申请公布号 |
US6690031(B1) |
申请公布日期 |
2004.02.10 |
申请号 |
US19990294335 |
申请日期 |
1999.04.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;NAKAZAWA MISAKO |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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