发明名称 Semiconductor device and method of manufacturing the same
摘要 An electro-optical device including an auxiliary capacitance using a pair of transparent conductive films is improved to provide a semiconductor device with high quality. A first transparent conductive film and a capacitance insulating film are formed into a laminate on a leveling film, and an opening portion is formed. An insulating film is formed thereon, and a second transparent conductive film is patterned to form a pixel electrode. At this time, the auxiliary capacitance made of a structure in which the capacitance insulating film is sandwiched between the first transparent conductive film and the pixel electrode is formed.
申请公布号 US6690031(B1) 申请公布日期 2004.02.10
申请号 US19990294335 申请日期 1999.04.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHTANI HISASHI;NAKAZAWA MISAKO
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 主分类号 G02F1/136
代理机构 代理人
主权项
地址