| 摘要 |
An exposure method for correcting dimension variations in a pattern resulting from the fogging effect occurring during electron beam exposure and/or the loading effect occurring during dry etching, and a recording medium for recording the same are provided. According to the exposure method, dimension variations can be minimized by calculating the loading effect and/or fogging effect causing dimension variations in a pattern, correcting mask pattern dimension data in advance based on a calculated result and making exposure according to the corrected pattern data. Further, the loading effect and/or fogging effect can be easily calculated because the above-described method can be realized as a computer program and the computer program can be included in an exposure tool, thereby enabling exposure based on a corrected value.
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