| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to reduce a bird's beak phenomenon occurring in forming an oxide layer for isolation and to prevent the bird's beak from penetrating an active region through a pad oxide layer. CONSTITUTION: A pad oxide layer(21), a polysilicon layer(22) and the first nitride layer(23) are stacked on a semiconductor substrate(20). The first nitride layer on an isolation formation region is patterned. The surface of an exposed polysilicon layer is oxidized to form a sacrificial oxide layer. The surface of the semiconductor substrate is cleaned to eliminate the sacrificial oxide layer. A spacer for preventing oxidation is formed on the sidewall part of the patterned first nitride layer. The surface of the exposed semiconductor substrate is oxidized to form an oxide layer(25) for isolation.
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