| 发明名称 |
Composition for oxide CMP |
| 摘要 |
A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
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| 申请公布号 |
US6689692(B1) |
申请公布日期 |
2004.02.10 |
| 申请号 |
US19970994894 |
申请日期 |
1997.12.19 |
| 申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
GROVER GAUTAM S.;MUELLER BRIAN L.;WANG SHUMIN |
| 分类号 |
C09K3/14;C09G;C09G1/02;C23F1/00;H01L21/302;H01L21/304;H01L21/3105;(IPC1-7):H01L21/302 |
主分类号 |
C09K3/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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