发明名称 Semiconductor integrated circuit device
摘要 A pass-transistor logic circuit configuration that can form a high-speed chip in a small area with short wire length. In a selector circuit PMOS and NMOS transistors with different gate signals but with the same drain outputs are arranged, respectively, so their diffusion layers are shared. The PMOS and NMOS are staggered so that their gates are almost in line. With this arrangement, wires connecting drains of the PMOS and NMOS and wires connecting sources of the PMOS and NMOS do not intersect each other, so they can be wired with only the first wiring layer. Further, gate input signals can be wired with only polysilicon wires without crossing each other. The pass-transistor logic circuit is made to pass through the signal buffers before or after it is connected to the selector. This can make a compact, fast circuit.
申请公布号 US6690206(B2) 申请公布日期 2004.02.10
申请号 US20020052251 申请日期 2002.01.23
申请人 RENESAS TECHNOLOGY CORPORATION;HITACHI DEVICE ENG 发明人 RIKINO KUNIHITO;SASAKI YASUHIKO;YANO KAZUO;KATO NAOKI
分类号 H01L21/8238;H01L21/82;H01L27/00;H01L27/02;H01L27/092;H03K19/0948;H03K19/173;(IPC1-7):H03K19/094 主分类号 H01L21/8238
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