发明名称 Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSI
摘要 First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed.
申请公布号 US6691297(B1) 申请公布日期 2004.02.10
申请号 US20000517617 申请日期 2000.03.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MISAKA AKIO;ODANAKA SHINJI
分类号 G06F17/50;(IPC1-7):G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项
地址