发明名称 |
POWER SWITCH BUILT AROUND MIS TRANSISTOR |
摘要 |
FIELD: pulse engineering; contactless switching devices. SUBSTANCE: power switch built around MIS transistor 9 has transformer with primary winding 2 and secondary winding 3, similar-conductivity transistors 7 and 8 with resistor 6 inserted between their bases. Emitters of transistors 7 and 8 are connected to secondary winding 3 of transformer 1 and collectors, to gate-source junction of MIS transistor 9. Base-emitter junctions of transistors 7 and 8 are shorted out by diodes 4 and 5 in cut-off direction. EFFECT: enhanced reliability. 1 cl, 1 dwg |
申请公布号 |
RU2223596(C2) |
申请公布日期 |
2004.02.10 |
申请号 |
RU20010118296 |
申请日期 |
2001.07.02 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-PROIZVODSTVENNOE OB"EDINENIE PRIKLADNOJMEKHANIKI IM. AKAD. M.F. RESHETNEVA" |
发明人 |
SOKOLOV M.I.;MIKHEEV P.V. |
分类号 |
H03K17/567;H02M7/537 |
主分类号 |
H03K17/567 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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