| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which the leak characteristics and the like of a dielectric film, ferroelectric film and the like are improved and to provide a semiconductor device having a wide operating range. <P>SOLUTION: A silicon oxide film 102, a Pt film 103x, a Ti film 104x, and a PZT film 105x are deposited sequentially on an Si substrate 101. The Si substrate 101 is placed in a chamber 106 and the PZT film 105x is irradiated with a millimetric wave 108. Since the dielectric film, e.g. the PZT film 105x, is irradiated with the millimetric wave and heated locally, the leak characteristics and the like of the dielectric film are improved without having an adverse effect on a device manufactured on the Si substrate 10. <P>COPYRIGHT: (C)2003,JPO |
