| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method for removing a reactive byproduct effectively in a CVC system, in which a film of Ru or RuO2 is formed, and an etching processing system. SOLUTION: In a cleaning method, an oxide gas of oxygen atoms or O3 as an etching gas for cleaning the inside of a processing system is used to remove a reactive byproduct containing Ru deposited or stuck to the inside thereof in a cleaning step. The cleaning is carried out in a short time at a temperature of 25 to 250 deg.C with O3 density of 5% or above. By using the etching gas mentioned above, the cleaning is carried out without damaging the manufacturing system. As another oxide gas, an oxygen halide gas or an N2O gas may be available. In this way, an availability factor of the processing system can be increased, and a decrease in yield caused by contamination can be prevented. |
