发明名称 |
RISING AFTER CHEMICAL-MECHANICAL PLANARIZATION PROCESS APPLIED ON A WAFER |
摘要 |
A wafer having a non-metallic surface material containing at least partly silicon is planarized by progressively introducing a rinsing solution on the wafer surface so that the chemical attack of the polishing of the wafer surface is controllably stopped before going beyond a desired planarization. Chemical-mechanical planarization on a wafer having a non-metallic surface material containing at least partly silicon, involves polishing the wafer surface using a polishing plate together with a polishing solution comprising a chemical agent for chemical attacking the surface and abrasive particles for mechanically attacking the surface; rinsing resulting residues; and final cleaning. The rinsing solution is progressively introduced on the wafer surface so that the chemical attack of the polishing step is controllably stopped before going beyond a desired planarization. |
申请公布号 |
AU2003263399(A1) |
申请公布日期 |
2004.02.09 |
申请号 |
AU20030263399 |
申请日期 |
2003.07.22 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
LAURENT FILIPOZZI;FREDERIC METRAL |
分类号 |
H01L21/304;B08B1/04;B24B;B24B1/00;B24B7/22;B24B37/04;B28D5/00;H01L21/02;H01L21/306 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|