| 摘要 |
PURPOSE: To obtain a method for fabricating a semiconductor light emitting element employing a gallium nitride based compound semiconductor in which a low resistance p-type layer can be obtained by heating a p-type semiconductor layer uniformly in a short time thereby activating the entirety. CONSTITUTION: A gallium nitride based compound semiconductor layer, comprising n-type layers 3, 4 and p-type layers 6, 7, is formed on a substrate 1 and then the p-type layers are activated. In such a method for fabricating a semiconductor light emitting element, the p-type layers are activated by scanning a predetermined range thereof using an electron beam lithography system having a beam diameter of 1μm or less. |
