METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of suppressing warp in an SOI wafer in a manufacturing process. SOLUTION: The oxidation of filling layers 8a is prevented from being oxidized in an LOCOS process for forming a 6th insulating layer 14a by coating the surfaces of the filling layers 8a for filling trenches formed in a semiconductor layer 3 of the SOI wafer with anti-oxidation layers 13a to suppress the warp of the SOI wafer. COPYRIGHT: (C)2004,JPO