| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for forming wiring on a W plug at a high production yield. SOLUTION: When an insulating film is deposited on the W plug, first of all, a first insulating film is deposited by a technique not using high density plasma and successively a second insulating film is deposited by a technique using the high density plasma. The insulating film of two layers or more is formed by the deposition method, so that the insulating film can be deposited flatly, and when an upper wiring layer is formed thereon, short-circuit between wirings can be prevented. COPYRIGHT: (C)2004,JPO
|
