| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which damage to a gate insulation film is controlled and prevented. SOLUTION: It is found that the end point can surely be determined at timing T<SB>1</SB>when the etching of a polysilicon film 3 of an n-type region 5 is completed, because, when a changing rate b/a of light emitting intensity in Fig.(a) becomes 0.3 or more, a change (b) of light emitting intensity becomes extremely large. Moreover, as an occupying rate of n-type region 5 in the whole region is increased, the changing rate b/a of light emitting intensity becomes larger. Namely, Fig.(b) illustrates that, when the n-type region 5 is widened, the end point of the timing T<SB>1</SB>when the etching of the polysilicon film 3 in the n-type region 5 is completed can be easily determined, and the etching can surely be stopped at the timing T<SB>1</SB>when the etching of polysilicon film 3 of the n-type region 5 is completed. Therefore, it is preferable to increase the n-type region 5, where the changing rate b/a of light emitting intensity becomes 0.3 or more in Fig. 7(b), up to 50% or larger of the whole region. COPYRIGHT: (C)2004,JPO
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