| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline semiconductor film for obtaining the polycrystalline semiconductor film having high uniformity and productivity and favorable characteristics, and to provide a method for manufacturing a thin film transistor and a pulse laser annealing apparatus. SOLUTION: The method for manufacturing the polycrystalline semiconductor film comprises an amorphous semiconductor film forming step of forming the amorphous semiconductor film on an insulator, and a polycrystalline semiconductor film forming step of forming the polycrystalline semiconductor film by irradiating the amorphous semiconductor film with a pulse laser and a continuous wave laser to melt-recrystallize the semiconductor film. The method for manufacturing the thin film transistor using this method is obtained. Further, the pulse laser annealing apparatus includes a pulse laser oscillator for outputting the pulse laser, a continuous wave laser oscillator for radiating a continuous wave laser, and an optical system for shaping the pulse laser and the continuous wave laser and radiating the lasers to the same part of the amorphous semiconductor film on the insulator. COPYRIGHT: (C)2004,JPO
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