发明名称 |
Semiconductor laser device and fabrication method thereof |
摘要 |
A semiconductor laser device includes an InP substrate and a multi-layered structure formed on the InP substrate, wherein the multi-layered structure includes at least a plurality of active regions for outputting a laser beam, and the plurality of active regions each are provided in each of a plurality of grooves dented toward the InP substrate.
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申请公布号 |
US2004022290(A1) |
申请公布日期 |
2004.02.05 |
申请号 |
US20030628550 |
申请日期 |
2003.07.28 |
申请人 |
KITO MASAHIRO;ISHINO MASATO;TODA TOMOAKI;NAKANO YOSHIAKI |
发明人 |
KITO MASAHIRO;ISHINO MASATO;TODA TOMOAKI;NAKANO YOSHIAKI |
分类号 |
H01S5/00;H01S5/12;H01S5/20;H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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