| 发明名称 |
Method for fabricating n-type carbon nanotube device |
| 摘要 |
A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.
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| 申请公布号 |
US2004023431(A1) |
申请公布日期 |
2004.02.05 |
| 申请号 |
US20030369540 |
申请日期 |
2003.02.21 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
WANG HUNG-HSIANG;WEI JENG-HUA;KAO MING-JER |
| 分类号 |
H01L21/205;H01L21/318;H01L21/3205;H01L21/336;H01L21/4763;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L51/40;H01L21/320;H01L21/476;H01L21/823 |
主分类号 |
H01L21/205 |
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