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发明名称
铟锑薄膜半导体之元件之制造法
摘要
申请公布号
TW006340
申请公布日期
1970.05.01
申请号
TW014378
申请日期
1969.02.26
申请人
拜欧尼亚股份有限公司
发明人
大下正秀;塚越庸弘
分类号
H01L
主分类号
H01L
代理机构
代理人
陈世雄 台北巿大安区一○六六一敦化南路六九五号八楼
主权项
地址
高雄巿左营区埤北里西巷42号
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