发明名称 METHOD AND APPARATUS FOR BUILT-IN SELF-REPAIR OF MEMORY STORAGE ARRAYS
摘要 An integrated circuit device includes a memory array having a plurality of memory cells arranged in a plurality of rows and a plurality of columns. First and second redundant rows of memory cells and a first redundant column of memory cells are provided. A test circuit is coupled to the memory array and is adapted to test a plurality of memory cells coupled to each of the plurality of rows. A control circuit is coupled to the test circuit and is adapted to receive test results from the test circuit, the control circuit being adapted to respond to a detection of a defective memory cell to determine an assignment of at least one of the first and second redundant rows and first redundant column. A first register is coupled to the control circuit and adapted to receive an assignment of the first redundant row in response to a determination by the control circuit, a second register is coupled to the control circuit and adapted to receive an assignment of the first redundant column in response to a determination by the control circuit, and a third register is coupled to the control circuit and adapted to receive an assignment of the second redundant row in response to a determination by the control circuit.
申请公布号 KR20040011440(A) 申请公布日期 2004.02.05
申请号 KR20037007339 申请日期 2003.05.30
申请人 发明人
分类号 G01R31/28;G11C29/00;G11C7/00;G11C29/12;G11C29/44 主分类号 G01R31/28
代理机构 代理人
主权项
地址