METHOD FOR MANUFACTURING SEMICONDUCTOR BACK-ELECTRET

摘要

PURPOSE: A method for manufacturing a semiconductor back-electret is provided to be capable of preventing characteristic deterioration caused by humidity, and reducing the loss of electric charges for improving charge efficiency. CONSTITUTION: A multilayer thin film is formed at the upper portion of a silicon wafer by repeatedly depositing silicon inorganic material using a CVD(Chemical Vapor Deposition)(S3). A Teflon thin film is formed at the upper portion of the multilayer thin film by carrying out a spin coating process(S4). A heat treatment is carried out at the resultant structure at a predetermined high temperature(S5). After the resultant structure is cut into a predetermined size, a charging process is carried out each predetermined size(S6,S7).