| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of epitaxial wafer whose high light emitting output and high speed response time are compatible with each other when used as a material for an LED. <P>SOLUTION: Temperature T of a gallium arsenide (GaAs) single crystal substrate is set to T1 and a homogeneous layer having the same composition as the single crystal substrate is epitaxially grown. The temperature T of the substrate is raised from T1 to T2 and in the state that T2 is maintained, a composition change layer GaAs<SB>1-x</SB>P<SB>x</SB>(x=0→0.17) is epitaxially grown. While the temperature T of the substrate is decreased from T2 to T3, a composition fixed layer GaAs<SB>1-x</SB>P<SB>x</SB>(x=0.17) is epitaxially grown to obtain the epitaxial wafer. Zinc is thermally diffused from the surface of the composition fixed layer of the obtained epitaxial wafer to form a p-conductive (p) layer. <P>COPYRIGHT: (C)2004,JPO |
