| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a high withstand voltage MOS transistor which is never affected by a characteristic change caused by hot carriers and kept superior in transistor characteristics. SOLUTION: The semiconductor device comprises a MOS transistor having an LDD structure which is equipped with a gate electrode formed on the surface of a semiconductor substrate through the intermediary of a gate oxide film; and source/drain regions that are formed inside the semiconductor substrate as sandwiching the gate electrode between them, composed of low-concentration impurity regions and high-concentration impurity regions higher than the low-concentration impurity regions in impurity concentration, and formed in the low-concentration impurity regions. The gate oxide film is extended from the side edges of the gate electrode in bilateral directions so as to cover the surfaces of the low-concentration impurity regions. COPYRIGHT: (C)2004,JPO
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