PROCESS FOR PREPARING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To inhibit the change in diameter of a silicon single crystal bar by setting the set pull-up speed of the single crystal bar so as to give a constant V/G and precisely controlling the actual pull-up speed so that it matches the set pull-up speed. SOLUTION: While pulling up the silicon single crystal bar 24 from a silicon melt 13 melted by a heater 17, its diameter is detected at a predetermined time interval. The diameter of the silicon single crystal bar is controlled to achieve a predetermined diameter by feeding back the detection output to the pull-up speed of the silicon single crystal bar and to the temperature of the heater. When correcting the heater temperature to correct the pull-up speed, changes in the measured diameter of the silicon single crystal bar and in the pull-up speed are monitored, and the heater temperature is corrected to prevent the measured diameter from changing in the reverse direction of the predetermined diameter. COPYRIGHT: (C)2004,JPO