发明名称 |
METHOD FOR FORMING INSULATING LAYER |
摘要 |
<p>A method for forming an insulating layer, which comprises irradiating a film containing a curable material provided on a substrate for an electronic device with a low energy plasma, to thereby cure said film containing a curable material. The method can be employed for forming an elctroconductive film having high quality, while preventing the application of an excessive thermal budget on the film.</p> |
申请公布号 |
WO2004012252(A1) |
申请公布日期 |
2004.02.05 |
申请号 |
WO2003JP09696 |
申请日期 |
2003.07.30 |
申请人 |
TOKYO ELECTRON LIMITED;HONGOH, TOSHIAKI;HOSHINO, SATOHIKO |
发明人 |
HONGOH, TOSHIAKI;HOSHINO, SATOHIKO |
分类号 |
H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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