发明名称 METHOD FOR FORMING INSULATING LAYER
摘要 <p>A method for forming an insulating layer, which comprises irradiating a film containing a curable material provided on a substrate for an electronic device with a low energy plasma, to thereby cure said film containing a curable material. The method can be employed for forming an elctroconductive film having high quality, while preventing the application of an excessive thermal budget on the film.</p>
申请公布号 WO2004012252(A1) 申请公布日期 2004.02.05
申请号 WO2003JP09696 申请日期 2003.07.30
申请人 TOKYO ELECTRON LIMITED;HONGOH, TOSHIAKI;HOSHINO, SATOHIKO 发明人 HONGOH, TOSHIAKI;HOSHINO, SATOHIKO
分类号 H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/312 主分类号 H01L21/3105
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