MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a technology for reconciling damage suppression and minuteness given to a plasma MOS device in a process device utilizing the action of plasma. SOLUTION: In a process forming the MOS device on the main face of a silicon wafer, before wafer processing by the process device (an etching device, an ashing processing device, a sputter device and a CVD device) using the plasma, an insulating film is previously formed on the wafer rear face and reduces damage to the device caused by the process device using the plasma. COPYRIGHT: (C)2004,JPO