发明名称 METHOD FOR ADJUSTING VOLTAGE ON A POWERED FARADAY SHIELD
摘要 An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.
申请公布号 WO2004012221(A2) 申请公布日期 2004.02.05
申请号 WO2003US23304 申请日期 2003.07.23
申请人 LAM RESEARCH CORPORATION;LOHOKARE, SHRIKANT, P;KUTHI, ANDRAS;BAILEY, ANDREW, D., III 发明人 LOHOKARE, SHRIKANT, P;KUTHI, ANDRAS;BAILEY, ANDREW, D., III
分类号 H05H1/46;C23F1/00;H01J37/32;H01L21/3065 主分类号 H05H1/46
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