METHOD FOR ADJUSTING VOLTAGE ON A POWERED FARADAY SHIELD
摘要
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.
申请公布号
WO2004012221(A2)
申请公布日期
2004.02.05
申请号
WO2003US23304
申请日期
2003.07.23
申请人
LAM RESEARCH CORPORATION;LOHOKARE, SHRIKANT, P;KUTHI, ANDRAS;BAILEY, ANDREW, D., III
发明人
LOHOKARE, SHRIKANT, P;KUTHI, ANDRAS;BAILEY, ANDREW, D., III