| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To freely change/set the procedure and contents of a defective acceleration operation sequence in the initializing sequence and burn-in process after applying a power while decreasing the control signals. <P>SOLUTION: This nonvolatile semiconductor memory device is provided with a memory cell array constituted of nonvolatile memory cells in which the prescribed data can be electrically rewritten and which is provided with a command column storing region in which a command column performing the prescribed operation is written, a decoding circuit selecting memory cells constituting the memory cell array by an address signal, a sense amplifier circuit detecting the prescribed data stored in the memory cell array and the command column and amplifying them, and a sequence control section including a control circuit controlling respectively operation of writing data in the memory cell array, reading data from the memory cell array, and erasing data, while reading successively the command codes of the command column written in the memory cell array, and controlling command column execution sequence for executing the command in the memory. <P>COPYRIGHT: (C)2004,JPO</p> |
