| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed polishing tool for dry polishing of silicon bare wafers. SOLUTION: A mold is filled up with a mixture comprising 5-50 wt.% of crystalline cellulose having an average polymerization degree of 50-400, an average grain diameter of 5-150μm, 49-94.5 wt.% of grinding grains equal to or lower than the substrate to be polished in terms of Mohs hardness (e.g., magnesium carbonate, calcium carbonate), and 0.5-10 wt.% of a chloride-containing compound with 60-400°C melting point (e.g., chlorinated isocyanuric acid, ammonium chloride), and then the mixture is pressurized with a pressure of 100-1,000 kgf/cm<SP>2</SP>so as to shape the chemical mechanical polishing tool. When the silicon substrate is polished, the chloride-containing compound acts as an accelerator, thereby improving the polishing speed. COPYRIGHT: (C)2004,JPO
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