发明名称 |
OZONE OXIDATION OF SILICON SUBSTRATES FOR FOR FORMATION OF AN INTERFACIAL LAYER FOR HIGH-K GATE STACKS |
摘要 |
A new method of forming an interfacial oxide layer for gate structures is provided. The method comprises ozone oxidation of a silicon substrate at low temperatures to form an interfacial oxide layer. A method of making gate stacks is also provided which includes forming an interfacial oxide layer on the top surface of a silicon substrate by ozone oxidation at a low temperature, and depositing dielectric layers on the top of the interfacial oxide layer. |
申请公布号 |
WO2004012237(A2) |
申请公布日期 |
2004.02.05 |
申请号 |
WO2003US23798 |
申请日期 |
2003.07.29 |
申请人 |
ASML US, INC.;SENZAKI, YOSHIHIDE;HERRING, ROBERT |
发明人 |
SENZAKI, YOSHIHIDE;HERRING, ROBERT |
分类号 |
H01L;H01L21/28;H01L21/31;H01L21/316;H01L29/51 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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