NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: To eliminate the burying failure of an interlayer insulating film. CONSTITUTION: A sidewall 212 having a gentle shape is formed on a side of a silicon oxide film 206 formed on a control gate electrode CG. This sidewall 212 makes it easy to enter an interlayer insulating film 150 and makes it difficult to generate the burying failure of the interlayer insulating film 150 when the interlayer insulating film 150 is buried between memory cells comprising the control gate electrode CG and a floating gate electrode FG.