| 摘要 |
PURPOSE: To manufacture a thin-film transistor and a flat panel display device without increasing the thermal processes, and to provide the same, in which defects such as cracking are reduced as much as possible. CONSTITUTION: The thin film transistor and the flat panel display device are manufactured, by injecting impurities to a semiconductor region of the thin film transistor, and forming thereafter an insulating film by coating method, followed by heat treatment in which activation of the impurities and baking of the insulating film are carried out as a single process. The thin-film transistor is provided with the semiconductor region therefor, a gate insulating film covering the semiconductor region, a gate formed on the gate insulating film, source/drain regions formed in the semiconductor region by injecting the impurities, and the insulating film formed by coating method and baking to cover these regions.
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