发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND REDUNDANT REPLACING METHOD FOR NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To relieve not only initial fault caused in a test but one part of accidental fault and abrasion fault caused in a user. <P>SOLUTION: By providing a redundant information recording region 108 being writable in a user mode and storing redundant information of a redundant cell array region106, when rewriting in a user mode is made defective, reading of redundant information indication whether redundant replacement can be performed after redundant replacement at the time of a test is performed, when redundant replacement can be performed, new redundant information can be written in the redundant information storing region 108. Thereby, a redundant cell array region 106 being not used at the time of a test can be used effectively, not only initial fault caused in a test but one part of accidental fault and abrasion fault caused in a user can be relieved. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004039179(A) 申请公布日期 2004.02.05
申请号 JP20020198058 申请日期 2002.07.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAGAI HIROYASU
分类号 G11C16/02;G11C16/06;G11C29/00;G11C29/04;H01L21/02 主分类号 G11C16/02
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