| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an operating breakdown voltage of a DMOS type high breakdown transistor. <P>SOLUTION: A body layer includes a first body layer 3 deeply formed by including a channel region CH between an n+-type source layer and an n-type first drain layer 4, and a second body layer 6 overhanging from the first body layer 3 to a region under the layer 4 and shallowly formed. Since the impurity concentration of the layer 6 can be set low irrespective of that of the layer 3, an electric field by a drain voltage can be alleviated in this part. <P>COPYRIGHT: (C)2004,JPO |
