| 摘要 |
PROBLEM TO BE SOLVED: To provide a contents retrieving memory cell (CAM cell) in which an operation can be performed stably at a low operation voltage. SOLUTION: This ternary contents relieving memory has NAND type matched line structure. In such a matched line structure, only when all data bits stored in a CAM cell of one row coincide with corresponding comparison data bits, the matched line is discharged/charged. The ternary contents relieving memory cell comprises a main memory cell, a mask memory cell, a detecting circuit, a mask circuit, and a matched circuit. Transistors constituting the detecting circuit are realized so as to have complementary form to transistors constituting the match circuit and the mask circuit. COPYRIGHT: (C)2004,JPO
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